收藏本站
SUD50N03-12P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
I D (A)
V DS (V)
30
R DS(on) ( ? )
0.0120 at V GS = 10 V
0.0175 at V GS = 4.5 V
17.5
14.5
a
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50N03-12P-E3 (Lead (PB) free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
30
± 20
Unit
V
Continuous Drain Current a
T A = 25 °C
T A = 100 °C
I D
17.5
12.4
Pulsed Drain Current
I DM
40
A
Continuous Source Current (Diode
Conduction) a
I S
5
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I AS
E AS
P D
T J , T stg
30
45
46.8
6.5 a
- 55 to 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ? 10 s
Steady State
R thJA
18
40
23
50
°C/W
Maximum Junction-to-Case
R thJC
2.6
3.2
Note:
a. Surface mounted on FR4 board, t ? 10 s.
Document Number: 72267
S12-0335-Rev. C, 13-Feb-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SUD50N03-16P-GE3 MOSFET N-CH D-S 30V TO252
SUD50N04-05L-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-09H-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-16P-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-37P-T4-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-8M8P-4GE3 MOSFET N-CH 40V 50A TO-252
SUD50N06-07L-E3 MOSFET N-CH D-S 60V TO252
SUD50N06-08H-E3 MOSFET N-CH D-S 60V TO252
相关代理商/技术参数
SUD50N03-16P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-CHANNEL 30-V (D-S) MOSFET
SUD50N03-16P-E3 功能描述:MOSFET 30V 15A 40.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N03-16P-GE3 功能描述:MOSFET 30V 15A 40.8W 16mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N03-7M3P-E3 功能描述:MOSFET 30V 50A 65A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-05L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 C MOSFET
SUD50N04-05L-E3 功能描述:MOSFET 40V 115A 136W 5.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-06H 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175∩ MOSFET
SUD50N04-06H-E3 功能描述:MOSFET 40V 109A 136W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube